Recursor Design for the Atomic Layer Deposition (A..., 2010

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Title
Recursor Design for the Atomic Layer Deposition (ALD) of Hafnium Oxide Thin Films
Date
2010
Material Type
Thesis
Creator/Author
Kalapugama, Suneth
Copyright
Copyright 2010 by Suneth Kalapugama. In accordance with Title 17 of the United States Code, Copyright Law of the United States of America, this material is copyrighted, and any further reproduction or distribution is prohibited without the permission of the copyright owner.
Subject
Hafnium compounds; Dielectric films; Thin films;
Description
Thesis (M.S.)--Central Michigan University, 2010. xiv, 78 leaves : ill. Includes bibliographic references (leaves 77-78).
Language
English
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