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Residual Stress Measurement of Polycrystalline Sil..., 2010

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Title Residual Stress Measurement of Polycrystalline Silicon by X-Ray Diffraction
Date 2010
Material Type Thesis
Creator/Author Hadd, John W.
Copyright Copyright 2010 by John W. Hadd. In accordance with Title 17 of the United States Code, Copyright Law of the United States of America, this material is copyrighted, and any further reproduction or distribution is prohibited without the permission of the copyright owner.
Subject Residual stresses; X-rays -- Diffraction; Silicon crystals;
Description Thesis (M.S.)--Central Michigan University, 2010. ix, 53 leaves : ill. Includes bibliographic references (leaves 52-53).
Language English
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